Коммутатор Tenda TEG5328F Layer 3, 24-1GbE, 4-SFP, SNMP, telnet, Web, CLI, настольный/настенный, серый

Layer 1, 8-PoE, 1-1GbE, 24-10/100Mb, 1-combo-1GbE, в стойку, серый

24PORT 4POE

16 портов, 150Вт

48x10/100/1000, 2x10/100/1000 SFP, 19"

The layer-by-layer (LbL) deposition technique is a versatile approach for preparing nanoscale multimaterial films: the fabrication of multicomposite films by the LbL procedure allows the combination of literally hundreds of different materials with nanometer thickness in a single device to obtain novel or superior performance. In the last 15 years the LbL technique has seen considerable developments and has now reached a point where it is beginning to find applications in bioengineering and biomedical engineering. The book gives a thorough overview of applications of the LbL technique in the context of bioengineering and biomedical engineering where the last years have witnessed tremendous progress. The first part familiarizes the reader with the specifics of cell-film interactions that need to be taken into account for successful application of the LbL method in biological environments. The second part focuses on LbL-derived small drug delivery systems and antibacterial agents, and the third part covers nano- and microcapsules as drug carriers and biosensors. The fourth and last part focuses on larger-scale biomedical applications of the LbL method such as engineered tissues and implant coatings.

24x1 Гбит/с, SFP 2x1 Гбит/с, установка в стойку, металлический корпус

48x10/100/1000 Base-T, 2xSFP 10/100/1000, L2

Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.

гигабитный PoE, 24 порта, 2 SFP порта, 410Вт

24x10/100/1000 Base-T, 4xSFP 10/100/1000, L2